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GTRA184602FC

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description TheGTRA184602FCisa460-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA184602FC-V1

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description TheGTRA184602FCisa460-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA184602FC-V1

High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange.\n\n; ·Input matched\n·Asymmetric Doherty design\nMain: P3dB = 170 W Typ\n·Peak: P3dB = 350 W Typ·Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture\nGain = 15 dB @ 49 dBm\n·Efficiency = 60% @ 49 dBm\n·Output power at P3dB = 490 W\n;

MACOMTyco Electronics

瑪科姆技術方案控股有限公司

MACOM

GTRA184602FC-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description TheGTRA184602FCisa460-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA184602FC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description TheGTRA184602FCisa460-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

技術參數(shù)

  • Min Frequency (MHz)：

    1805

  • Max Frequency(MHz)：

    1880

  • P3dB Output Power(W)：

    460

  • Gain(dB)：

    15.5

  • Efficiency(%)：

    60

  • Operating Voltage(V)：

    48

  • Package Category：

    Earless

  • Form：

    Packaged Discrete Transistor

  • Technology：

    GaN-on-SiC

供應商型號品牌批號封裝庫存備注價格
MACOM
24+
5000
原裝軍類可排單
 詢價
INFINEON/英飛凌
23+
H-37248C
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
H-37248C
7000
詢價
INFINEON/英飛凌
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MACOM
2450+
H-37248C-4
8850
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
MACOM Technology Solutions
25+
-
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
Cree/Wolfspeed
100
詢價
INFINEON/英飛凌
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
2023+
SMD
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
 詢價
INFINEON/英飛凌
24+
NA/
4000
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多GTRA184602FC供應商 更新時間2025-8-2 14:17:00

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