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GTRA362802FC

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description TheGTRA362802FCisa280-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)designedforuseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNon

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA362802FC

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz

CreeCree, Inc

科銳

Cree

GTRA362802FC-V1

High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz

The GTRA362802FC is a 280-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.\n\n; ·Asymmetrical Doherty design: Main P3dB 120 W Typ, Peak P3dB 180 W Typ\n·Typical Pulsed CW performance; 3400-3600 MHz, 48 V, combined outputs\n·Output power at P3dB 280 W\n·Efficiency 60%\n·Gain 15 dB\n·Capable of handling 10:1 VSWR @48 V, 44 W (WCDMA) output power\n·Low thermal resistance\n·Pb-;

MACOMTyco Electronics

瑪科姆技術(shù)方案控股有限公司

MACOM

GTRA362802FC-V1

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description TheGTRA362802FCisa280-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)designedforuseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNon

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA362802FC-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description TheGTRA362802FCisa280-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)designedforuseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNon

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTRA362802FC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description TheGTRA362802FCisa280-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)designedforuseinmulti-standardcellular poweramplifierapplications.Itfeaturesinputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features ?GaNon

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

技術(shù)參數(shù)

  • Min Frequency (MHz)：

    3300

  • Max Frequency(MHz)：

    3900

  • P3dB Output Power(W)：

    280

  • Gain(dB)：

    13.5

  • Efficiency(%)：

    46

  • Operating Voltage(V)：

    48

  • Package Category：

    Earless

  • Form：

    Packaged Discrete Transistor

  • Technology：

    GaN-on-SiC

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MACOM
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MACOM Technology Solutions
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WOLFSPEED
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WOLFSPEED
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LUMEX
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Lumex
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更多GTRA362802FC供應(yīng)商 更新時(shí)間2025-8-3 14:16:00

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