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GTVA126001EC

Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

CreeCree, Inc

科銳

Cree

GTVA126001EC_FC

Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description TheGTVA126001ECandGTVA126001FCare600-wattGaNonSiChigh electronmobilitytransistors(HEMT)foruseintheDC-1.4GHzfrequecy band.Theyfeatureinputmatching,highefficiency,andthermallyenhancedpackages. Features ?GaNonSiCHEMTtechnology ?Inputmatched ?Ty

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA126001EC-V1

Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Input matched Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pu; ? Input matched\n?Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB\n?Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300;

MACOMTyco Electronics

瑪科姆技術方案控股有限公司

MACOM

GTVA126001EC-V1-R0

Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description TheGTVA126001ECandGTVA126001FCare600-wattGaNonSiChigh electronmobilitytransistors(HEMT)foruseintheDC-1.4GHzfrequecy band.Theyfeatureinputmatching,highefficiency,andthermallyenhancedpackages. Features ?GaNonSiCHEMTtechnology ?Inputmatched ?Ty

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA126001EC-V1-R2

Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description TheGTVA126001ECandGTVA126001FCare600-wattGaNonSiChigh electronmobilitytransistors(HEMT)foruseintheDC-1.4GHzfrequecy band.Theyfeatureinputmatching,highefficiency,andthermallyenhancedpackages. Features ?GaNonSiCHEMTtechnology ?Inputmatched ?Ty

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA126001EC-V1-R0

射頻結柵場效應晶體管(RF JFET)晶體管 GaN HEMT 50V 1.2-1.4GHz 600W

Wolfspeed(CREE)

WOLFSPEED, INC.

Wolfspeed(CREE)

GTVA126001EC-V1-R0

Package：SOT-957A；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：600W GAN HEMT 50V 1.2-1.4GHZ FET

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

技術參數(shù)

  • Peak Output Power Range：

    500 W\>> 500 W

  • Frequency Range：

    General Purpose

  • Technology：

    GaN on SiC

  • Frequency (Min)：

    1.2 GHz

  • Frequency (Max)：

    1.4 GHz

  • Peak Output Power：

    600 W

  • Gain：

    20 dB

  • Efficiency：

    63%

  • Operating Voltage：

    50 V

  • Form：

    Packaged Discrete Transistor

  • Package Type：

    Bolt Down

供應商型號品牌批號封裝庫存備注價格
Wolfspeed
22+
H-36248-2
1200
只做原裝,假一罰十價格低。
 詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
Wolfspeed Inc.
25+
H-36248-2
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
Wolfspeed
25+
Tube
4430
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
Cree/Wolfspeed
100
詢價
CREE
23+
SMD
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
Cree/Wolfspeed
2022+
H-37265J-2
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經驗/只供原裝正品:0755-83271743鄒小姐
 詢價
24+
N/A
47000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多GTVA126001EC供應商 更新時間2025-8-2 15:01:00

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