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GTVA261701FA

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description TheGTVA261701FAisa170-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputmatching,highefficiency,and athermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA261701FA

Thermally-Enhanced High Power RF GaN HEMT

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

GTVA261701FA

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz

CreeCree, Inc

科銳

Cree

GTVA261701FA

Thermally-Enhanced High Power RF GaN HEMT

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

GTVA261701FA-V1

High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz

The GTVA261701FA is a 170-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.\n\n; ·Typical Pulsed CW performance; 2690 MHz; 48 V\n·Output power P3dB 170 W\n·Efficiency 75 %\n·Gain 15 dB\n·Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power\n·RoHS compliant\n·Input matched\n;

MACOMTyco Electronics

瑪科姆技術(shù)方案控股有限公司

MACOM

GTVA261701FA-V1

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description TheGTVA261701FAisa170-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputmatching,highefficiency,and athermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA261701FAV1R0

Cellular (2300 MHz to 2700 MHz)

High Power RF GaN-SiC HEMT, 170 W, 50 V, 2620 – 2690 MHz; ·Input Matched\n ·Typical Pulsed CW performance, 2690 MHz, 48 V, single side\n ·Output power at P3dB = 170 W\n ·Efficiency = 72%\n ·Gain = 16 dB\n \n ·GaN-SiC HEMT technology\n ·High power density\n ·High efficiency\n ·RoHS-compliant\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

GTVA261701FA-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description TheGTVA261701FAisa170-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputmatching,highefficiency,and athermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA261701FA-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description TheGTVA261701FAisa170-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputmatching,highefficiency,and athermally-enhancedpackagewithearlessflange. Features ?GaNonSiCHEMT

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

GTVA261701FA_15

Thermally-Enhanced High Power RF GaN HEMT

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

技術(shù)參數(shù)

  • Min Frequency (MHz)：

    2300

  • Max Frequency(MHz)：

    2700

  • P3dB Output Power(W)：

    170

  • Gain(dB)：

    17.0

  • Efficiency(%)：

    43

  • Operating Voltage(V)：

    50

  • Package Category：

    Earless

  • Form：

    Packaged Discrete Transistor

  • Technology：

    GaN-on-SiC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MACOM
24+
5000
原裝軍類(lèi)可排單
 詢價(jià)
INFINEON/英飛凌
24+
244
現(xiàn)貨供應(yīng)
 詢價(jià)
INFINEON/英飛凌
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
7000
詢價(jià)
Infineon
1931+
N/A
493
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 詢價(jià)
INFINEON
1809+
SMD
26
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Cree/Wolfspeed
2022+
-
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢價(jià)
更多GTVA261701FA供應(yīng)商 更新時(shí)間2025-8-3 10:06:00

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