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HERF1004GS

10Ampere Insulated Dual Series Connection High Efficiency Rectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

HO-NP-1004

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團

HO-P-1004

CurrentTransducer

LEMLEM Electronics (China) Co., Ltd.

萊姆電子萊姆（LEM）集團

HPR1004

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1004

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1004C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

I1004RU

I1000RUSERIES

MPD

MPD (Memory Protection Devices)

IIRL1004

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤6.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPT-1004

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IRL1004

HEXFETPowerMOSFET

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRF

International Rectifier

IRL1004

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤6.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1004L

HEXFETPowerMOSFET

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

IRL1004L

AdvancedProcessTechnologyUltraLowOn-Resistance

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRL1004LPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRL1004PBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRF

International Rectifier

IRL1004PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL1004S

HEXFETPowerMOSFET

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

IRL1004S

AdvancedProcessTechnologyUltraLowOn-Resistance

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRL1004S

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchinga

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL1004SPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
POWER
24+
TO-220F
15000
原裝正品現(xiàn)貨
 詢價
TSC
21+
TO-220F
160
原裝現(xiàn)貨假一賠十
 詢價
TSC/臺半
23+
TO-220F-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
臺半
22+
TO-220F
8880
原裝認準芯澤盛世！
 詢價
22+
TO-220F
8900
英瑞芯只做原裝正品!!!
 詢價
TSC/臺灣半導(dǎo)體
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
TSC臺半
TO-220F
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
POWER
2022+
TO-220F
57550
詢價
TSC
22+
TO-220F
10000
絕對全新原裝現(xiàn)貨
 詢價
臺半
11+
TO-220F
55000
詢價
更多HERF1004GS供應(yīng)商 更新時間2025-1-10 8:45:00

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