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HGI040N06SL

60V N-Ch Power MOSFET

Feature ◇Optimizedforhighspeedswitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體（上海）有限公司

HGI040N06SL

60V N-Ch Power MOSFET

Feature ◇Optimizedforhighspeedswitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體（上海）有限公司

040N06N

Superiorthermalresistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FDI040N06

N-ChannelPowerTrench?MOSFET60V,168A,4.0mW

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI040N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=168A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP040N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=168A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP040N06

N-ChannelPowerTrench?MOSFET60V,168A,4.0m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGA040N06S

60VN-ChPowerMOSFET

Feature ◇Optimizedforhighspeedswitching ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools ◇

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體（上海）有限公司

HGA040N06SL

60VN-ChPowerMOSFET

Feature ◇Optimizedforhighspeedswitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體（上海）有限公司

HGD040N06S

60VN-ChPowerMOSFET

Feature ◇Optimizedforhighspeedswitching ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇PowerTools ◇

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體（上海）有限公司

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更多HGI040N06SL供應(yīng)商 更新時(shí)間2025-3-9 11:10:00

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