首頁(yè) >HGTG20N60C3D>規(guī)格書(shū)列表
零件型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HGTG20N60C3D | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately; ? 45A, 600V, TC= 25°C\n? 600V Switching SOA Capability\n? Typical Fall Time. . . . . . . . . . . . . . . .? 108ns at TJ= 150°C\n? Short Circuit Rating\n? Low Conduction Loss\n? Hyperfast Anti-Parallel Diode; | RenesasRenesas Technology Corp 瑞薩瑞薩科技有限公司 | ||
HGTG20N60C3D | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately; ? 45A, 600V, TC= 25°C\n? 600V Switching SOA Capability\n? Typical Fall Time. . . . . . . . . . . . . . . .? 108ns at TJ= 150°C\n? Short Circuit Rating\n? Low Conduction Loss\n? Hyperfast Anti-Parallel Diode; | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
HGTG20N60C3D | 絲?。?a target="_blank" title="Marking" href="/g20n60c3d/marking.html">G20N60C3D;Package:TO-247;45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
HGTG20N60C3D | 絲?。?a target="_blank" title="Marking" href="/g20n60c3d/marking.html">G20N60C3D;Package:TO-247;45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate | Intersil Intersil Corporation | ||
HGTG20N60C3D | Package:TO-247-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 45A 164W TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
HGTG20N60C3D
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.8V @ 15V,20A
- 開(kāi)關(guān)能量:
500μJ(開(kāi)),500μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
28ns/151ns
- 測(cè)試條件:
480V,20A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT 600V 45A 164W TO247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INTERSIL |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
FAIR |
24+ |
TO247 |
48650 |
原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本) |
詢價(jià) | ||
仙童 |
06+ |
TO-247 |
6000 |
原裝庫(kù)存 |
詢價(jià) | ||
FAIRCHILD |
23+ |
TO-247 |
9526 |
詢價(jià) | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INTERSIL |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
TO-247 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
FAI |
03+ |
TO-247 |
43 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
仙僮 |
TO-247 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ON Semiconductor |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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