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HGTP1N120BN

5.3A, 1200V, NPT Series N-Channel IGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BN

5.3A, 1200V, NPT Series N-Channel IGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTP1N120BN

5.3A, 1200V, NPT Series N-Channel IGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BND

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CN

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CND

6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

IXTA1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTA1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    HGTP1N120BN

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    5.3A, 1200V, NPT Series N-Channel IGBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
23+
TO-220
9526
詢價(jià)
Intersil
24+
TO-220
8866
詢價(jià)
FAIRCHILD
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INTERSIL
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
NEXPERIA/安世
23+
SOT404
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
INTERSIL
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
INTERSIL
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
23+
TO-220
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多HGTP1N120BN供應(yīng)商 更新時(shí)間2025-1-26 15:12:00

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