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HMC-ALH244

GaAs HEMT MMIC LOW NOISE AMPLIFIER

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HMC-ALH244

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

Hittite

Hittite Microwave Corporation

HMC-ALH244

ACTIVE BIAS CONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz

Hittite

Hittite Microwave Corporation

HMC-ALH244_09

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz

Hittite

Hittite Microwave Corporation

IRF244

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF244

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP244

15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP244

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole

IRF

International Rectifier

IRFP244

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=15A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP244

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsth

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=16A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP244B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP244PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFP244PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS244A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS244B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    HMC-ALH244

  • 制造商：

    HITTITE

  • 制造商全稱：

    Hittite Microwave Corporation

  • 功能描述：

    GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ADI/HITTITC
24+
SMD
600
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
 詢價(jià)
ADI(亞德諾)
23+
標(biāo)準(zhǔn)封裝
13839
正規(guī)渠道,大量現(xiàn)貨,只等你來。
 詢價(jià)
ADI
18+
原廠原盒
2000
十年信譽(yù),只做原裝無假貨,無貨給賠償
 詢價(jià)
ADI
21+
12588
原裝正品,自己庫存 假一罰十
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HITTITE
14+
NA
100
終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商
 詢價(jià)
HITTITE
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
HITTITE
638
原裝正品
 詢價(jià)
HITTITE
2023+
NA
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
HITTITE
24+
NA
9856
全新原裝現(xiàn)貨/假一罰百!
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ADI
20+
射頻模具
55
就找我吧!--邀您體驗(yàn)愉快問購元件!
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更多HMC-ALH244供應(yīng)商 更新時(shí)間2025-1-11 14:26:00

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