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HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01F

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01F

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01F

Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01FDW1T1

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating?HumanBodyModel:3A ?MachineModel:C ?Pb?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features ?HighVoltageandHighCurrent:VCEO=50V,IC=200mA ?HighhFE:hFE=200~400 ?MoistureSensitivityLevel:1 ?ESDRating ?HumanBodyModel:3A ?MachineModel:C ?SPrefixforAutomo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HN1B01FU

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

HN1B01FU-GR

Audio-Frequency General-Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=?50V,IC=?150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    HN1B01F

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TOSHIBA/東芝
20+
TSOP-6
120000
原裝正品 可含稅交易
詢價(jià)
TOSHIBA
24+
原廠封裝
63000
原裝現(xiàn)貨假一罰十
詢價(jià)
TOSHIBA
23+
SOT-163
63000
原裝正品現(xiàn)貨
詢價(jià)
TOSHIBA/東芝
24+
SOT-163
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
TOSHIBA
23+
SOT-163
46098
##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價(jià)
TOSHIBA
23+
SOT-163
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
TOSHIBA/東芝
23+
SOT-163
50000
原裝正品 支持實(shí)單
詢價(jià)
TOSHIBA
23+
SOT-163
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ONSEMICONDUC
05+
原廠原裝
58216
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
09+
SOT363
5500
原裝無鉛,優(yōu)勢(shì)熱賣
詢價(jià)
更多HN1B01F供應(yīng)商 更新時(shí)間2025-7-1 14:00:00