HS817G中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

? Isolation test voltage (partial discharge test

voltage) Vpd = 1.6 kV

? Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive)

VIORM = 850 Vpeak

? Creepage current resistance according to IEC 112,

comparative tracking index: CTI ? 250

? Thickness through insulation ? 0.4 mm

? Isolation materials according to UL 94 V-O

? Pollution degree 2 (resp. IEC 664)

? Climatic classification 55/100/21 (IEC 68 part 1)

? Low temperature coefficient of CTR

? G = leadform 10.16 mm; provides creepage distance

> 8 mm, suffix letter “G” is not marked on the optocoupler

? Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

? Switch-mode power supplies

? Line receiver

? Computer peripheral interface

? Microprocessor system interface

DESCRIPTION

The HS817 series consists of a phototransistor optically

coupled to a gallium arsenide infrared-emitting diode in a

4-lead plastic dual inline package.