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NP100P06PDG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP100P06PLG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應商型號品牌批號封裝庫存備注價格
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
ADAM-TECH
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
HUASHUO(華朔)
2112+
TO-263
105000
800個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現貨,長
 詢價
HUASHUO(華朔)
23+
TO263
6000
誠信服務，絕對原裝原盤
 詢價
HUASHUO華朔
23+
TO-200
22820
原裝正品，支持實單
 詢價
23+
65480
詢價
N/A
2023+環(huán)?，F貨
標準封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
凱信光電
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
凱信光電
N/A
7651
優(yōu)勢貨源原裝正品
 詢價
LECROY
1922+
6852
只做原裝正品現貨!或訂貨假一賠十!
 詢價
更多HSH100P06供應商 更新時間2025-1-25 11:06:00

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