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HUFA75639S3ST

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUF75639S3

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUF75639S3

N-ChannelUltraFETPowerMOSFET100V,56A,25m廓

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HUF75639S3

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUF75639S3S

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUF75639S3S

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF75639S3S

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUF75639S3ST

N-ChannelUltraFETPowerMOSFET100V,56A,25m廓

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HUF75639S3ST

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HUFA75639S3S

56A,100V,0.025Ohm,N-ChannelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    HUFA75639S3ST

  • 功能描述:

    MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ONSemiconductor
18+
NA
3000
進口原裝正品優(yōu)勢供應
詢價
F
23+
TO-263A
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
三年內(nèi)
1983
只做原裝正品
詢價
FSC/ON
23+
原包裝原封 □□
18760
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
詢價
F
2020+
TO-263A
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ON Semiconductor
21+
D2PAK(TO-263AB)
800
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!!
詢價
ON/安森美
22+
TO-263
20000
保證原裝正品,假一陪十
詢價
ON/安森美
21+
TO-263
252
原裝現(xiàn)貨假一賠十
詢價
ON
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
更多HUFA75639S3ST供應商 更新時間2025-1-24 16:12:00