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HVU131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVU131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

HVU131

LowCapacitanceLowForwardresistance

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

IGCS-E131GP

Industrial4-portPCIeunmanagedGigabitEthernetswitchcard

ORING

ORing Industrial Networking Corp

IGPCS-E131GP

Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard

ORING

ORing Industrial Networking Corp

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

IRF131

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF131

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF131

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF131

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFP131

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS131

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IS131

GENERALPURPOSEDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS131

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
HITACHI
24+
0603
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
HITACHI
16+
原廠封裝
8000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS瑞薩/HITACHI日立
24+
SOD-5230603
25000
新進庫存/原裝
 詢價
Hitachi
22+23+
Sot-423
28924
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
RENESAS/瑞薩
23+
SOD-723
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
HITACHI/日立
2021+
SOT23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
RENESAS/瑞薩
21+
SOD-723
22300
優(yōu)勢供應(yīng) 實單必成 可13點增值稅
 詢價
HITACHI
1922+
SOD-523
35689
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
HITACHI
23+
SOD723
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
HITACHI
21+
SOD723
10000
原裝現(xiàn)貨假一罰十
 詢價
更多HVD131KRF供應(yīng)商 更新時間2025-1-7 14:52:00

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