HYB514800BJ中文資料西門子數據手冊PDF規(guī)格書

The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.

Advanced Information

? 512 288 words by 8-bit organization

? 0 to 70 ?C operating temperature

? Fast access and cycle time

RAS access time:

60 ns (-60 version)

70 ns (-70 version)

80 ns (-80 version)

CAS access time: 20 ns

Cycle time:

110 ns (-60 version)

130 ns (-70 version)

150 ns (-80 version)

? Fast page mode cycle time

45 ns (-60 version)

45 ns (-70 version)

50 ns (-80 version)

? Single + 5 V (± 10 ) supply with a built-in Vbb generator

? Low power dissipation

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

max. 468 mW active (-80 version)

? Standby power dissipation:

11 mW standby standby (TTL)

5.5 mW max.standby (CMOS)

? Output unlatched at cycle end allows twodimensional chip selection

? Read, write, read-modify write, CAS-beforeRAS refresh, RAS-only refresh, hidden refresh, fast page mode capability

? All inputs and outputs TTL-compatible

? 1024 refresh cycles / 16 ms

? Plastic Packages: P-SOJ-28-2 400 mil width