零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
I7N80 | Marking:I7N80;Package:TO-262;7A 800V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導體江蘇東海半導體股份有限公司 | WXDH | |
I7N80 | Marking:I7N80;Package:TO-262;7A 800V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導體江蘇東海半導體股份有限公司 | WXDH | |
I7N80 | Marking:I7N80;Package:TO-262;7A 800V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導體江蘇東海半導體股份有限公司 | WXDH | |
I7N80 | Marking:I7N80;Package:TO-262;7A 800V N-channel Enhancement Mode Power MOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導體江蘇東海半導體股份有限公司 | WXDH | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.44Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-CHANNELMOSFET APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical11.3pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Fluke |
新 |
10 |
全新原裝 貨期兩周 |
詢價 | |||
Fluke |
2022+ |
6 |
全新原裝 貨期兩周 |
詢價 | |||
I8000000-015 |
3 |
3 |
詢價 | ||||
XX |
QFN |
17432 |
提供BOM表配單只做原裝貨值得信賴 |
詢價 | |||
XX |
11+PB |
QFN |
5 |
剛到現(xiàn)貨加微13425146986 |
詢價 | ||
ASE |
17+ |
QFP-64 |
12000 |
只做全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
ASE |
23+ |
QFP-64 |
12000 |
全新原裝假一賠十 |
詢價 | ||
2023+ |
QFP-64 |
3000 |
進口原裝現(xiàn)貨 |
詢價 | |||
ASE |
23+ |
QFP-64 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ITEX |
23+ |
QFP |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 |
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