ICX224

Timing Generator for Frame Readout CCD Image Sensor

Description TheCXD2470RisatiminggeneratorICwhichgeneratesthetimingpulsesforperformingframereadoutusingtheICX224,ICX284,ICX202andICX232CCDimagesensor. Features ?Baseoscillationfrequency24.00to36.00MHz(max.) ?High-speed/low-speedshutterfunction ?Supportsquadru

ICX224

Timing Generator and Signal Processor for Frame Readout CCD Image Sensor

Description TheCXD3410GAisatiminggeneratorandCCDsignalprocessorICfortheICX202/232,ICX224/284CCDimagesensor. Features ?Timinggeneratorfunctions ?Horizontaldrivefrequency12to18MHz(Baseoscillationfrequency24to36MHz) ?Supportsframereadout/draft(quad

ICX224AK

Diagonal 8mm (Type 1/2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

ICX224AKF

Diagonal 8mm (Type 1/2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

ICX224AQ

Diagonal 8mm (Type 1/2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

ICX224AQF

Diagonal 8mm (Type 1/2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras

IRF224

HEXFETTRANSISTORS

250V1.1ohmHEXFET

IRF224

HighSpeedApplications

IRFD224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRFD224

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

IRFD224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

IRFD224PBF

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

IRFD224PBF

HEXFETPOWERMOSFET(VDSS=250V,RDS(on)=1.1廓,ID=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRFD224PBF

PowerMOSFET

IRFM224B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRFR224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

IRFR224

iscN-ChannelMOSFETTransistor

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr