IDC04S60C

2nd generation thinQ SiC Schottky Diode

IDC04S60C

2nd generation thinQ SiC Schottky Diode;

IDC04S60CE

Chip Diode; ·Revolutionary semiconductor material - silicon carbide\n ·Switching behaviour benchmark\n ·No Reverse Recovery / no forward recovery\n ·Temperature independent switching behaviour\n ·Qualified according to JEDEC based on target applications\n;

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

IDC04S60CE

2nd generation thinQ!TM SiC Schottky Diode

IDC04S60CEX1SA1

Package：模具；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SIC 600V 4A SAWN WAFER

IDC04S60CEX7SA1

Package：模具；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURPOSE SAWN WAFER