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MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR850

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

MBR850

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

MBR850

SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A

ReverseVoltage40to200V ForwardCurrent8.0A Features ?LowPowerLoss,HighEfficiency ?LowForwardVoltageDrop ?HighCurrentCapability ?LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

大昌電子如皋市大昌電子有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowpowerloss,highefficiency. ?Lowforwrdvol

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR850

8.0ASCHOTTKYBARRIERDIODE

Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

詳細參數(shù)

  • 型號:

    IE-V850E-MC

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    Development Tools, Main In Circuit Emulation Board

  • 功能描述:

    BD EMULATOR V850E MA1 ICE

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
2447
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原裝正品公司現(xiàn)貨,假一賠十!
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21+
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6820
只做原裝,質(zhì)量保證
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13880
公司只售原裝,支持實單
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23+
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10000
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Infineon/英飛凌
23+
PG-TO247-6
25630
原裝正品
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Infineon/英飛凌
PG-TO247-6
6000
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Infineon
23+
標準封裝
5000
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
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更多IE-V850E-MC供應商 更新時間2025-4-7 11:01:00