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IIRFR4105

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRFR4105Z

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤24.5m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFL4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=3.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4105

UltraLowOn-Resistance

Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla

KERSEMI

Kersemi Electronic Co., Ltd.

IRFL4105

60VN-ChannelIRFL4105

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFL4105PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFL4105PBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL4105PBF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFL4105PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL4105TRPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFR4105

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR4105

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105

55VN-ChannelMOSFET

Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFR4105PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IFR4105TR

  • 制造商：

    International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
N/A
DIP-3
35560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
SAMSUNG
23+
SMD
43812
全新原裝現(xiàn)貨,專業(yè)代理熱賣
 詢價
IR
22+
TO-252
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-252
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
2023+
TO-252
4835
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
HARRIS
2023+
TO252
50000
原裝現(xiàn)貨
 詢價
IR
23+
TO-252
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-252
7000
詢價
IR
2023
NA
5058
原廠代理渠道,正品保障
 詢價
SAMSUNG
24+
SMD
9200
新進(jìn)庫存/原裝
 詢價
更多IFR4105TR供應(yīng)商 更新時間2025-1-7 17:34:00

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