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IIRF1404

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIRF1404Z

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIRL1404

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1404

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRF1404

AdvancedProcessTechnologyUltraLowOn-Resistance

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404

iscN-ChannelMosfetTransistor

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1404L

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404L

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404LPbF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

IRF1404LPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404LPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404PBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

IRF

International Rectifier

IRF1404PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1404S

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRF

International Rectifier

IRF1404S

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRF

International Rectifier

IRF1404S

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1404SPBF

HEXFET?PowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
INFINEON
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
VISHAY
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IFM
23+
SENSOR
128
全新、原裝
 詢價
ST意法
20+
LGA12
17000
加速度計,只做全新原裝
 詢價
ST/意法
23+
VFLGA-12221
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
更多IIRF1404供應商 更新時間2025-1-15 15:00:00

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