IIRL540N

N-Channel MOSFET Transistor

?DESCRITION ?Itisintendedforgeneralpurposeswitchingapplications ?FEATURES ?Lowdrain-sourceon-resistance: RDS(on)≤44m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper

IIRL540N

isc N-Channel MOSFET Transistor

IK-540A

ToshibaIK-540ACamera

Forhigh-resolutionimaginginchallenginglightingconditions,thereisonlyonechoice:TheToshibaIK-540A. Thisamazingcameradeliverstheabsolutebestimagingperformanceinlowlight.Howgood?ItisdocumentedtobeuptoTENTIMESaspowerfulinlowlightthanconventionalmonochromeca

IQXO-540

CrystalClockOscillatorSpecification

IQXO-540-AUTO

CrystalClockOscillatorSpecification

IRC540

PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRC540PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

IRF540

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

IRF540

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA