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IXFH10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.74Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFP10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFP10N60P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=740mΩ(Max)@VGS=10V APPLICATIONS ·Switching ·DC-DCConverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXGA10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGA10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IKB10N60T

  • 功能描述:

    IGBT 晶體管 LOW LOSS DuoPack 600V 10A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
SOT-263
17193
原裝進口假一罰十
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ADI
21+
MSOP-8
3000
原裝現(xiàn)貨
詢價
INFINEON
24+
TO-263
5000
原廠授權代理 價格絕對優(yōu)勢
詢價
INFINEON/英飛凌
24+
TO-263
11100
全新原裝現(xiàn)貨
詢價
Infineon(英飛凌)
24+
TO263
8048
原廠可訂貨,技術支持,直接渠道。可簽保供合同
詢價
INFINEON
23+
TO-263
12148
原裝進口、正品保障、合作持久
詢價
INFINEON
2430+
TO-263
8540
只做原裝正品假一賠十為客戶做到零風險!!
詢價
INFINEON
24+
P-TO-263-3-2
8866
詢價
INFINEON
100
原裝現(xiàn)貨,價格優(yōu)惠
詢價
更多IKB10N60T供應商 更新時間2025-4-29 15:06:00