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IMZA120R020M1H

Marking：12M1H020；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R020M1H

2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control

Features ?Dual-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?39nspropagationdelaywith5nschannel-to-channeldelaymismatch(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R020M1

FinaldatasheetCoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=104AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R020M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=116AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R020M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R020M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R020M1H

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(on)=19mΩ（TYP.）@VGS=18VTj=25℃ ·Verylowswitchinglosses APPLICATIONS ·Solarpoweroptimizer ·OnlineUPS/IndustrialUP ·DC-DCConverters ·Stringinverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IMW120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
22+
TO-247-4
22358
本公司只做原裝正品,優(yōu)勢供貨渠道!量大可訂!
 詢價
INFINEON
23+
PG-TO247-4
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價
Infineon
23+
PG-TO247-4
15500
英飛凌優(yōu)勢渠道全系列在售
 詢價
Infineon Technologies
23+
SMD
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價
INFINEON
2023
NA
3975
原廠代理渠道,正品保障
 詢價
Infineon/鑻遍鍑?120
瀹炲崟璇風(fēng)數(shù)璇濊仈緋?189234603
22
詢價
INFINEON
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
INFINEON
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
Infineon(英飛凌)
2324+
NA
78920
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口
 詢價
INFINEON
22+
NA
1206
原裝正品支持實單
 詢價
更多IMZA120R020M1H供應(yīng)商 更新時間2025-1-22 14:44:00

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