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INA111AU

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111AU

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111AU/1K

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111AU/1KE4

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111AU/1KG4

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111AUE4

High Speed FET-Input INSTRUMENTATION AMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BP

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BP

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BU

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BU

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

IPMC-111PB

IndustrialminitypeEthernettofiberPoEmediaconverter

ORING

ORing Industrial Networking Corp

IRFE111

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRFF111

PowerMOSField-EffectTransistors

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice

GESS

GE Solid State

IRFF111

IM-CHANIMELPOWERMOSFETsTO-39PACKAGE

TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

GENERALPURPOSEDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

TRANSIENTVOLTAGESUPPRESSOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS111

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    INA111AU

  • 功能描述:

    儀表放大器 High Speed FET-Input Instrumentation Amp

  • RoHS:

  • 制造商:

    Texas Instruments

  • 輸入補(bǔ)償電壓:

    150 V

  • 最大輸入電阻:

    10 kOhms

  • 共模抑制比(最小值):

    88 dB

  • 工作電源電壓:

    2.7 V to 36 V

  • 電源電流:

    200 uA

  • 最大工作溫度:

    + 125 C

  • 最小工作溫度:

    - 40 C

  • 封裝/箱體:

    MSOP-8

  • 封裝:

    Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
TI
21/22+
DIP
2000
原裝現(xiàn)貨,可含稅交易
詢價(jià)
Texas Instruments
24+
16-SOIC(0.295,7.50mm 寬)
25000
in stock線性IC-原裝正品
詢價(jià)
TI
24+
SOIC16
5630
TI一級(jí)代理原廠授權(quán)渠道實(shí)單支持
詢價(jià)
BB
2020+
SOP
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
TI/德州儀器
23+
SOIC16
18204
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢價(jià)
TI/德州儀器
21+
SOIC16
444
原裝現(xiàn)貨
詢價(jià)
TI/德州儀器
21+
SOP-16
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
詢價(jià)
TI/德州儀器
23+
SOIC16
10000
公司只做原裝正品
詢價(jià)
BB
2022
SOP16
3318
絕對(duì)實(shí)際庫存
詢價(jià)
BURR-BROWN
23+
SOP
22800
原盒原標(biāo),正品現(xiàn)貨,誠信經(jīng)營,假一罰十
詢價(jià)
更多INA111AU供應(yīng)商 更新時(shí)間2025-1-7 14:00:00