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IPP60R600P6

Metal Oxide Semiconductor Field Effect Transistor

600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600P6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPD60R600P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPP60R600P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA60R600P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R600P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

600VCoolMOS?P6PowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R600P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R600P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    IPP60R600P6

  • 功能描述：

    MOSFET 600V CoolMOS P6 MOSFET 600 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINE0N
23+
TO-220-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
INFINEO
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現貨,支持訂貨
 詢價
INFINEON
21+
TO-220
10000
原裝現貨假一罰十
 詢價
INFINEON/英飛凌
2022+
TO-220
50000
原廠代理 終端免費提供樣品
 詢價
INFINEON/英飛凌
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價
INFINEON/英飛凌
21+
TO-220
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON
14+
TO-220
2700
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
2022+
TO-220
57550
詢價
INFINEON/英飛凌
23+
TO-220
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
 詢價
更多IPP60R600P6供應商 更新時間2025-3-28 14:52:00

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