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IRF330

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF330

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF330

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF330

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF330

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrentID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Highvoltage,highspeedapplications ?Off-lineswitchingpowersupplies,UPS,ACandDC motorco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFE330

REPETITIVEAVALANCHEANDdv/dtRATED

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IPT330

  • 功能描述：

    TRIAC|300V V(DRM)|30A I(T)RMS|PRESS-19

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Amphenol
2301+
膠殼
10000
全新、原裝
 詢價
AMPHENOL/安費諾
2420+
/
481604
一級代理,原裝正品!
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Amphenol
2306+
NA
6680
原裝正品公司現(xiàn)貨,實單來談
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AMPHENOL
24+
con
10000
查現(xiàn)貨到京北通宇商城
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ICE
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
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INFINEON
23+
2
原裝正品現(xiàn)貨,德為本,正為先,通天下!
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英飛凌
21+
PG-HSOF-8
6000
絕對原裝現(xiàn)貨
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Infineon(英飛凌)
2112+
PG-HSOF-8
115000
2000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
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Infineon/英飛凌
21+
PG-HSOF-8
6000
原裝現(xiàn)貨正品
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Infineon/英飛凌
21+
PG-HSOF-8
10000
原裝,品質(zhì)保證,請來電咨詢
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更多IPT330供應(yīng)商 更新時間2025-2-3 17:30:00

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