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IR2010集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

IR2010
廠商型號(hào)

IR2010

參數(shù)屬性

IR2010 封裝/外殼為16-SOIC(0.295",7.50mm 寬);包裝為管件;類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 16SOIC

功能描述

HIGH AND LOW SIDE DRIVER

封裝外殼

16-SOIC(0.295",7.50mm 寬)

文件大小

227.05 Kbytes

頁(yè)面數(shù)量

16 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 23:00:00

IR2010規(guī)格書(shū)詳情

Description

The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation de lays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech nologies enable ruggedized monolithic construction.

Features

? Floating channel designed for bootstrap operation

Fully operational to 200V

Tolerant to negative transient voltage, dV/dt immune

? Gate drive supply range from 10 to 20V

? Undervoltage lockout for both channels

? 3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

? CMOS Schmitt-triggered inputs with pull-down

? Shut down input turns off both channels

? Matched propagation delay for both channels

? Outputs in phase with inputs

? Also available LEAD-FREE

Applications

? Audio Class D amplifiers

? High power DC-DC SMPS converters

? Other high frequency applications

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IR2010SPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    獨(dú)立式

  • 柵極類型:

    IGBT,N 溝道 MOSFET

  • 電壓 - 供電:

    10V ~ 20V

  • 邏輯電壓?- VIL,VIH:

    6V,9.5V

  • 電流 - 峰值輸出(灌入,拉出):

    3A,3A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    10ns,15ns

  • 工作溫度:

    -40°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    16-SOIC(0.295",7.50mm 寬)

  • 供應(yīng)商器件封裝:

    16-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 16SOIC

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