零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF2807 | Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF2807 | Power MOSFET(Vdss=75V, Id=82A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | ||
IRF2807 | 75V 單個 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n?\n ?\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
IRF2807 | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ||
IRF2807 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | |||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | |||
Advanced Process Technology Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | |||
Advanced Process Technology Ultra Low On-Resistance Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
技術(shù)參數(shù)
- OPN:
IRF2807PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
75 V
- RDS (on) @10V max:
13 m?
- ID @25°C max:
82 A
- QG typ @10V:
106.7 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF2807,全新原裝,正品供應(yīng)。 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價IRF2807即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
23+ |
TO220AB |
56000 |
詢價 | |||
IR(國際整流器) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價 | ||
IR |
24+ |
TO 220 |
161152 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-220 |
48650 |
原裝正品 特價現(xiàn)貨(香港 新加坡 日本) |
詢價 | ||
IR |
2012 |
TO-220 |
5 |
全新原裝正品現(xiàn)貨 |
詢價 | ||
IR |
1200 |
盈芯辭舊,利信E界,進口原裝現(xiàn)貨,質(zhì)量保證。
|
詢價 | ||||
IR |
23+ |
TO-220 |
9896 |
詢價 |
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