IRF5305L中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF5305L規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Surface Mount (IRF5305S)
l Low-profile through-hole (IRF5305L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
產(chǎn)品屬性
- 型號(hào):
IRF5305L
- 功能描述:
MOSFET P-CH 55V 31A TO-262
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
122322 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
1923+ |
TO-220 |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價(jià) | ||
IOR |
23+ |
TO262 |
12800 |
##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IR |
22+23+ |
TO-262 |
16565 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-262 |
4500 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購! |
詢價(jià) | ||
IR |
24+ |
TO-262 |
8866 |
詢價(jià) | |||
IR |
2023+ |
TO-262 |
3685 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) |