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IRF620S中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF620S
廠商型號(hào)

IRF620S

功能描述

HEXFET Power MOSFET

文件大小

198.69 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-12 23:00:00

IRF620S規(guī)格書(shū)詳情

DESCRIPTION

Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

● Surface Mount

● Available in Tape and Reel

● Dynamic dV/dt Rating

● Repetitive Avalanche Rated

● Fast Switching

● Ease of Paralleling

● Simple Drive Requirements

產(chǎn)品屬性

  • 型號(hào):

    IRF620S

  • 功能描述:

    MOSFET N-Chan 200V 5.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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