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IRF640NPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NPBF

Advanced Process Technology

IRF

International Rectifier

IRF640NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF640NS

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF640NS

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NS

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NS

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NS

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRF640NPBF

  • 功能描述：

    MOSFET MOSFT 200V 18A 150mOhm 44.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
22+
150000
原裝正品
 詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
IR
24+
TO-220
30000
進口原裝現(xiàn)貨
 詢價
INFINEON
21+
SMD
16230
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
INFINEON/英飛凌
21+
TO-220
20000
原裝現(xiàn)貨假一罰十
 詢價
IR
1616+
TO-220
10
只做原裝,可開13個點稅票
 詢價
INFINEON
22+
TO-220
12800
原裝,現(xiàn)貨
 詢價
INFINEON/IR
1907+
NA
4750
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON/英飛凌
22+
TO-220
42000
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
更多IRF640NPBF供應商 更新時間2025-1-25 11:00:00

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