IRF6609規(guī)格書(shū)詳情
Description
The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Conduction Losses
? Low Switching Losses
? Ideal Synchronous Rectifier MOSFET
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6609
- 功能描述：
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
26250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
IR |
24+ |
DIRECTFET |
65300 |
一級(jí)代理/放心購(gòu)買(mǎi)! |
詢價(jià) | ||
IR |
23+ |
DIRECTFET |
3000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
IRF |
SMD |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價(jià) | |||
IR |
22+ |
DIRECTFET |
9000 |
原裝正品 |
詢價(jià) | ||
IR |
24+ |
SMD |
5000 |
全新原裝正品,現(xiàn)貨銷(xiāo)售 |
詢價(jià) | ||
IR |
17+ |
DIRECTFET |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
DIRECTFET |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) |
