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IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830B

Reduced capacitive switching losses

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830B

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830B_V01

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830BPBF

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830BPBF-BE3

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=3.0A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ?FastSwitchingSpeed ?SimpleDriveRequirements APPLICATIONS ?Desingedforhighefficiencyswitchmodepowersupply.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF830FP

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830FP

4.5A500VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF830I-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF830L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF830PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

5.0A,500VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF830PBF

N-Channel600V(D-S)PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF830S

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalanche

IRF

International Rectifier

IRF830S

N-ChannelMOSFET

■Features ●VDS(V)=500V ●ID=4.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF830B

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
19+
TO-220
32000
詢價(jià)
FSC
23+
TO-220
5000
詢價(jià)
FAIRCHILD/仙童
24+
TO-220
2368
只做原廠渠道 可追溯貨源
 詢價(jià)
onsemi(安森美)
23+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
FSC
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
仙童
06+
TO-220
5000
原裝庫存
 詢價(jià)
仙童
23+
TO220
1581
專業(yè)優(yōu)勢供應(yīng)
 詢價(jià)
IR
23+
TO-220
20000
詢價(jià)
FSC
6200
TO-220
17
100%原裝正品現(xiàn)貨
 詢價(jià)
FSC
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
更多IRF830B供應(yīng)商 更新時(shí)間2025-1-7 16:03:00

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