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IRF830I-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF830L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF830PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

5.0A,500VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF830PBF

N-Channel600V(D-S)PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRF830S

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalanche

IRF

International Rectifier

IRF830S

N-ChannelMOSFET

■Features ●VDS(V)=500V ●ID=4.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

IRF830S

AvailableinTapeandReel

DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbecause

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830S

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830SPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF830SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830STRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFHM830

SmallPowIRMOSFETs

IRF

International Rectifier

IRFHM830D

SmallPowIRMOSFETs

IRF

International Rectifier

IRFHM830DPBF

SynchronousMOSFETforBuckConverters

IRF

International Rectifier

IRFHM830DPBF

CompatiblewithExistingSurfaceMountTechniques

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF830H

  • 制造商:

    HAR

  • 功能描述:

    IRF830 HARRIS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DIODES/美臺(tái)
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
APEC/富鼎
23+
NA/
88365
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
APEC/富鼎
23+
TO-220
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
APEC/富鼎
23+
TO-220
8000
只做原裝現(xiàn)貨
詢價(jià)
APEC/富鼎
23+
TO-220
7000
詢價(jià)
APEC/富鼎
22+
TO-220
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
詢價(jià)
APEC/富鼎
23+
TO-220
20000
原裝正品 歡迎咨詢
詢價(jià)
APEC
21+
TO-220F
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
APEC
20+
TO-220F
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
APEC/富鼎
23+
TO-220F
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢價(jià)
更多IRF830H供應(yīng)商 更新時(shí)間2025-1-7 11:00:00