首頁 >IRF9520NSTRR>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRaging ?RepetitiveAvalancheRated ?P-Channel ?175°COperatingTemperature ?Fas | IRF International Rectifier | IRF | ||
SurfaceMount DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?Dynamicdv/dtRaging ?RepetitiveAvalanche | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?Dynamicdv/dtRaging ?RepetitiveAvalanche | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?175°Coperatingtemperature ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleasesee | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NarrowVDCRegulator/ChargerwithSMBusInterface Applications ?Ultrabooks ?Notebookcomputers ?TabletPCs ?Portableequipmentwithrechargeablebatteries Features ?±0.5systemvoltageaccuracy(-10°Cto+100°C) ?±3accurateinputcurrentlimit(-10°Cto+100°C) ?±3accuratebatterychargecurrentlimit ?Variableswitchingfreq | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NarrowVDCRegulator/ChargerwithSMBusInterface Applications ?Ultrabooks ?Notebookcomputers ?TabletPCs ?Portableequipmentwithrechargeablebatteries Features ?±0.5systemvoltageaccuracy(-10°Cto+100°C) ?±3accurateinputcurrentlimit(-10°Cto+100°C) ?±3accuratebatterychargecurrentlimit ?Variableswitchingfreq | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NarrowVDCRegulator/ChargerwithSMBusInterface Applications ?Ultrabooks ?Notebookcomputers ?TabletPCs ?Portableequipmentwithrechargeablebatteries Features ?±0.5systemvoltageaccuracy(-10°Cto+100°C) ?±3accurateinputcurrentlimit(-10°Cto+100°C) ?±3accuratebatterychargecurrentlimit ?Variableswitchingfreq | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AVCouplerReceiver Overview TheLA9520VisareceiverICdevelopedforfree-spaceinfraredtransmissionofstereoaudioandvideosignals.Itintegratesalltherequiredfunctionsforreception,includingI/Vconversionforthereceivedsignal,apreamplifier,ALC,audiosignaldemodulation,andvideosignaldemodu | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO |
詳細(xì)參數(shù)
- 型號(hào):
IRF9520NSTRR
- 功能描述:
MOSFET P-CH 100V 6.8A D2PAK
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
9500 |
專業(yè)優(yōu)勢供應(yīng) |
詢價(jià) | ||
IR |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)! |
詢價(jià) | ||
INFINEON |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
VB |
21+ |
D2PAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
VB |
D2PAK |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
23+ |
TO263 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) |
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