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IRF9956PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF9956PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Generation V Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF9956PBF
- 功能描述：
MOSFET 30V N-CH HEXFET 7.7mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR(國際整流器) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
IR |
2020+ |
SOP8 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
24+ |
SOP8 |
22960 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
22+ |
SOP8 |
22990 |
原裝正品 |
詢價 | ||
IR |
19+ |
SOP8 |
33911 |
詢價 | |||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
Infineon Technologies |
2022+ |
8-SO |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 |
