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IRFB4212PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFB4212PBF
廠商型號

IRFB4212PBF

功能描述

DIGITAL AUDIO MOSFET

文件大小

292.17 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 10:20:00

IRFB4212PBF規(guī)格書詳情

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Features

● Key parameters optimized for Class-D audio amplifier applications

● Low RDSON for improved efficiency

● Low QG and QSW for better THD and improved efficiency

● Low QRR for better THD and lower EMI

● 175°C operating junction temperature for ruggedness

● Can deliver up to 150W per channel into 4? load in half-bridge topology

產(chǎn)品屬性

  • 型號:

    IRFB4212PBF

  • 功能描述:

    MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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