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IRFBG20

Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)

HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements

IRF

International Rectifier

IRFBG20

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipat

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFBG20

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20PBF

HEXFET? Power MOSFET

HEXFET?PowerMOSFET ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Lead-Free

IRF

International Rectifier

IRFBG20PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipat

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20_17

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFBG20PBF-BE3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFBG20

  • 功能描述：

    MOSFET N-Chan 1000V 1.4 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
65
只做原廠渠道 可追溯貨源
 詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-220
4000
全新原裝 絕對有貨
 詢價
IR
2015+
TO-220
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-220
9526
詢價
IR
24+
TO-220
85700
詢價
IR
2339+
TO26
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IR
23+
TO-220AB
7600
全新原裝現(xiàn)貨
 詢價
IR
24+
TO-220AB
4000
原裝現(xiàn)貨假一罰十
 詢價
更多IRFBG20供應商 更新時間2025-1-15 16:36:00

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