首頁 >IRFC9130B>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRFE9130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe

IRF

International Rectifier

IRFE9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9130

SimpleDriveRequirements

IRF

International Rectifier

IRFF9130

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

IRF

International Rectifier

IRFF9130

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF9130

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFF9130

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFNJ9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFP9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFC9130B

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    MOSFET P-CHANNEL 100V - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
SMD
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
SMD
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
SMD
7000
詢價
IR
1244+
裸片
1066
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
23+
裸片
10000
原裝正品現(xiàn)貨
 詢價
23+
65480
詢價
IR
05+
原廠原裝
4340
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
23+
DIP-4
8238
詢價
IOR
24+
DIP-4P
158
詢價
IR
23+
DIP-4
3100
全新原裝現(xiàn)貨
 詢價
更多IRFC9130B供應(yīng)商 更新時間2025-1-24 14:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多