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IRFD020中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRFD020
廠商型號

IRFD020

功能描述

Power MOSFET

文件大小

222.71 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-7 22:50:00

IRFD020規(guī)格書詳情

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.

The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.

FEATURES

? For Automatic Insertion

? Compact, End Stackable

? Fast Switching

? Ease of Paralleling

? Excellent Temperature Stability

? Compliant to RoHS Directive 2002/95/EC

產(chǎn)品屬性

  • 型號:

    IRFD020

  • 功能描述:

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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