首頁(yè) >IRFF220>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IRFF220

Absolute Maximum Ratings

N-ChannelPowerMOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFF220

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF220

N??HANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFM220A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM220B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR/U220A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR220

4.6A,200V,0.800Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRFR220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFF220

  • 制造商：

    International Rectifier

  • 功能描述：

    TRANS MOSFET N-CH 200V 3.5A 3PIN TO-39 - Bulk

  • 功能描述：

    N CH MOSFET, 200V, 3.5A, TO-205AF, Transistor

  • Polarity：

    N Channel, Continuous Drain Current

  • Id：

    3.5A, Drain Source Voltage

  • Vds：

    200V, On Resistance

  • Rds(on)：

    800mohm, Rds(on) Test Voltage

  • Vgs：

    10V, Threshold Voltage

  • Vgs：

    4V, No. of

  • Pins：

    3 , RoHS

  • Compliant：

    No

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
CAN3
6620
鄭重承諾只做原裝進(jìn)口貨
 詢價(jià)
HAR
24+
CAN3
181
詢價(jià)
HARRIS
24+
CAN3
6500
原裝現(xiàn)貨假一罰十
 詢價(jià)
HARRIS
23+
CAN3
5000
原裝正品,假一罰十
 詢價(jià)
HAR
05+
原廠原裝
4301
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
HAR
23+
CAN
3668
優(yōu)勢(shì)庫(kù)存
 詢價(jià)
IR
1822+
CN3
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
IR
21+
CAN3
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
IR
專業(yè)鐵帽
CAN3
1200
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
INTERSIL
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
更多IRFF220供應(yīng)商 更新時(shí)間2025-1-22 16:02:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多