首頁(yè) >IRFHM3911PBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFHM3911PBF | Compatible with Existing Surface Mount Techniques | IRF International Rectifier | IRF | |
IRFHM3911PBF | POE Power Sourcing Equipment Switch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Compatible with Existing Surface Mount Techniques | IRF International Rectifier | IRF | ||
POEPowerSourcingEquipmentSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
POEPowerSourcingEquipmentSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier | IRF | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier | IRF | ||
SiliconN-ChannelMOSTypeSwitchingRegulatorApplications SwitchingRegulatorApplications ?Smallgatecharge:Qg=60nC(typ.) ?Lowdrain-sourceONresistance:RDS(ON)=0.22?(typ.) ?Highforwardtransferadmittance:|Yfs|=11S(typ.) ?Lowleakagecurrent:IDSS=500μA(VDS=600V) ?Enhancementmodel:Vth=2.0to4.0V(VDS=10 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
EPITAXIALPLANARNPNTRANSISTOR(LOWNOISEAMPLIFIER) LOWNOISEAMPLIFIERAPPLICATION. FEATURES ·HighVoltage:VCEO=120V. ·ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ·HighhFE:hFE=200~700. ·LowNoise:NF=1dB(Typ.),10dB(Max.). ·ComplementarytoKTA1517. | KECKEC CORPORATION KEC株式會(huì)社 | KEC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON TECHNOLOGIES |
23+ |
4000 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢(xún)價(jià) | ||
IR |
1950+ |
PQFN |
4856 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢(xún)價(jià) | ||
IR |
2020+ |
QSOP8 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
Infineon Technologies |
21+ |
8-PQFN(3x3) |
4000 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢(xún)價(jià) | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
IR |
2021+ |
QSOP8 |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
INFINEON |
1809+ |
QFN-8 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
Infineon/英飛凌 |
21+ |
PQFN3.3X3.38L |
6000 |
原裝現(xiàn)貨正品 |
詢(xún)價(jià) |
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