IRFI734G中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFI734G規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5 kVRMS
● Sink to Lead Creepage Dist.= 4.8 mm
● Dynamic dV/dt
● Low Thermal Resistance
產(chǎn)品屬性
- 型號:
IRFI734G
- 功能描述:
MOSFET N-CH 450V 3.4A TO220FP
- RoHS:
否
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
-
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220F |
11220 |
全新原裝 |
詢價 | ||
INTERNATIONA |
05+ |
原廠原裝 |
4416 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
2016+ |
TO-220F |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR/VISHAY |
23+ |
TO-220F |
6000 |
原裝正品,支持實單 |
詢價 | ||
IR |
23+ |
TO-220F |
35890 |
詢價 | |||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
詢價 | |||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
23+ |
NA/ |
1850 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR/VISHAY |
24+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |