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IRFL014

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?E

IRF

International Rectifier

IRFL014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL014N

Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)

Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor

IRF

International Rectifier

IRFL014NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor

IRF

International Rectifier

IRFL014NTRPBF

Marking：FL014N；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

IRFL014NTRPBF

Advanced Process Technology

Description FifthGenerationHEXFET?MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor

IRF

International Rectifier

IRFL014PBF

Surface Mount, Fast Switching

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?FastSwitching ?Eas

IRF

International Rectifier

IRFL014PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFL014

  • 功能描述：

    MOSFET N-Chan 60V 2.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
24+
SOT-223
16000
只做原廠渠道 可追溯貨源
 詢價
IR
24+
SOT-223
160789
明嘉萊只做原裝正品現(xiàn)貨
 詢價
VISHAY/威世
24+
SOT-223
502057
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
SOT-223
7196
新進(jìn)庫存/原裝
 詢價
IR
05+
原廠原裝
7174
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
SOT-223
7600
全新原裝現(xiàn)貨
 詢價
IR
12+
SOT223
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
IRF
24+
SOT-223
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
更多IRFL014供應(yīng)商 更新時間2025-1-25 13:40:00

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