零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFP460A | Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFP460A | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageand | IRF International Rectifier | IRF | |
IRFP460A | Power MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SwitchModePower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFP460A | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) Description ThirdGenerationHEXFET?sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel | IRF International Rectifier | IRF | ||
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A ) | IRF International Rectifier | IRF | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 單個 描述:PLANAR \u003e= 100V | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
DSeriesPowerMOSFETs FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IRFP460A
- 功能描述:
MOSFET N-Chan 500V 20 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
17 |
TO-247 |
20000 |
原裝正品現(xiàn)貨 |
詢價 | ||
2015+ |
3000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
IR |
2024+ |
TO-247 |
32560 |
原裝優(yōu)勢絕對有貨 |
詢價 | ||
IR |
24+ |
TO 3P |
161554 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
F |
24+ |
TO-247 |
109812 |
詢價 | |||
VISHAY |
24+ |
100%原裝 |
3000 |
原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-247 |
9960 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
FSC |
23+ |
TO-247 |
9526 |
詢價 | |||
IR |
16+ |
原廠封裝 |
5400 |
原裝現(xiàn)貨假一罰十 |
詢價 |
相關(guān)規(guī)格書
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