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IRFP9240

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

Samsung

IRFP9240

12A, 200V, 0.500 Ohm, P-Channel Power MOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

Intersil

IRFP9240

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-12A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRF

IRFP9240

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFP9240

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NJSEMI

IRFP9240

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NJSEMI

IRFP9240

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-12A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

IRFP9240

P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=-10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

IRFP9240

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

IRFP9240

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel\n\n\n\n;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

技術(shù)參數(shù)

  • 漏源電壓(Vdss):

    200V

  • 柵源極閾值電壓(最大值):

    4V @ 250uA

  • 漏源導(dǎo)通電阻(最大值):

    500 mΩ @ 7.2A,10V

  • 類(lèi)型:

    P 溝道

  • 功率耗散(最大值):

    150W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2015+
400
公司現(xiàn)貨庫(kù)存
詢(xún)價(jià)
VISHAY
12+
TO-247
6000
原裝正品現(xiàn)貨
詢(xún)價(jià)
IR(國(guó)際整流器)
24+
5616
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣(mài)原裝現(xiàn)貨
詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
VISHAY
2025+
TO-247-3
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
詢(xún)價(jià)
IR(國(guó)際整流器)
24+
N/A
16252
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
詢(xún)價(jià)
11+
6985
詢(xún)價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
詢(xún)價(jià)
IR
23+
TO-247
6200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
詢(xún)價(jià)
IR
17+
TO-247
6200
詢(xún)價(jià)
更多IRFP9240供應(yīng)商 更新時(shí)間2025-8-2 16:00:00