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IRFR010

Power MOSFET

FEATURES ?Lowdrivecurrent ?Surface-mount ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010

N-CHANNEL POWER MOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR010

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010

AVALANCHE AND dv/dt RATED

IRF

International Rectifier

IRFR010

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR010_V01

Power MOSFET

FEATURES ?Lowdrivecurrent ?Surface-mount ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRFR010

  • 功能描述：

    MOSFET N-Chan 60V 7.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR/VISHAY
SOT252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
23+
TO-252
35890
詢價
IR
24+
TO-3
200
詢價
IR
23+
原廠原裝
6000
全新原裝
 詢價
IR
05+
原廠原裝
4355
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
IR
24+
原廠封裝
1836
原裝現(xiàn)貨假一罰十
 詢價
三星
24+
TO-252
5000
只做原裝公司現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
19+
TO-252
74935
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多IRFR010供應(yīng)商 更新時間2025-1-24 14:00:00

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