首頁>IRFR024>規(guī)格書詳情

IRFR024中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR024
廠商型號(hào)

IRFR024

功能描述

Power MOSFET

文件大小

1.06651 Mbytes

頁面數(shù)量

13

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 16:15:00

IRFR024規(guī)格書詳情

FEATURES

? Dynamic dV/dt rating

? Surface-mount (IRFR024, SiHFR024)

? Straight lead (IRFU024, SiHFU024)

? Available in tape and reel

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

產(chǎn)品屬性

  • 型號(hào):

    IRFR024

  • 功能描述:

    MOSFET N-Chan 60V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IR
24+
TO-252
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
IR
19+
TO-252
74944
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
TR
22+
SOT252
5000
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期
詢價(jià)
IR
22+
TO-252
9000
原裝正品
詢價(jià)
65
全新原裝 貨期兩周
詢價(jià)
IR
17+
TO-252
6200
100%原裝正品現(xiàn)貨
詢價(jià)
IR
21+
D-PAK
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
IR
23+
TO-252
5000
原裝正品,假一罰十
詢價(jià)
IR
2020+
TO-252
15000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
IR
22+
TO-252
8900
英瑞芯只做原裝正品!!!
詢價(jià)