零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR024N | MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | ||
IRFR024N | Ultra Low On-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR024N | 55V 單個 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
IRFR024N | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A?? | IRF International Rectifier | ||
IRFR024N | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | |||
Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | |||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | |||
ULTRA LOW ON RESISTANCE | IRF International Rectifier |
技術(shù)參數(shù)
- OPN:
IRFR024NTRLPBF/IRFR024NTRPBF
- Qualification:
Non-Automotive
- Package name:
DPAK/DPAK
- VDS max:
55 V
- RDS (on) @10V max:
75 m?/75 m?
- ID @25°C max:
17 A/17 A
- QG typ @10V:
13.3 nC/13.3 nC
- Polarity:
N
- VGS(th) min:
2 V/2 V
- VGS(th) max:
4 V/4 V
- VGS(th):
3 V/3 V
- Technology:
IR MOSFET?/IR MOSFET?
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon |
19+ |
SOT252 |
11900 |
詢價 | |||
INFINEON |
TO-252 |
180 |
原裝現(xiàn)貨,優(yōu)勢庫存 |
詢價 | |||
IR |
22+ |
SOT-252 |
11450 |
原裝正品,實單請聯(lián)系 |
詢價 | ||
IR(國際整流器) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價 | ||
IR |
24+ |
TO 252 |
161439 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
TECH PUBLIC(臺舟) |
24+ |
TO-252-2 |
5000 |
誠信服務(wù),絕對原裝原盤。 |
詢價 | ||
IR |
24+ |
TO-252 |
500863 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
25+ |
TO252 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送 |
詢價 | ||
IR(國際整流器) |
24+ |
N/A |
7246 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 |
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